| No. |
Part Name |
Description |
Manufacturer |
| 2881 |
GT80J101A |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 2882 |
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2883 |
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2884 |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2885 |
GT8G132 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2886 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2887 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2888 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2889 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2890 |
GU-3A |
Gate unit for thyristor |
TOSHIBA |
| 2891 |
GU-4A |
Gate unit for thyristor |
TOSHIBA |
| 2892 |
GU-5 |
Gate unit for thyristor |
TOSHIBA |
| 2893 |
GU-6 |
Gate unit for thyristor |
TOSHIBA |
| 2894 |
GU-C40 |
MITSUBISHI GATE DRIVER FOR GCT THYRISTOR High Power Inverter Use |
Mitsubishi Electric Corporation |
| 2895 |
GU-C40 |
GATE DRIVER FOR GCT THYRISTOR High Power Inverter Use |
Powerex Power Semiconductors |
| 2896 |
H102 |
Quad 2-input NAND gate (active pull-up), standard temperature range |
SGS-ATES |
| 2897 |
H102 |
Quad 2-input NAND gate (active pull-up), intermediate temperature range |
SGS-ATES |
| 2898 |
H102 |
Quad 2-input NAND gate (active pull-up), extended temperature range |
SGS-ATES |
| 2899 |
H103 |
Triple 3-input NAND gate (active pull-up), standard temperature range |
SGS-ATES |
| 2900 |
H103 |
Triple 3-input NAND gate (active pull-up), intermediate temperature range |
SGS-ATES |
| 2901 |
H103 |
Triple 3-input NAND gate (active pull-up), extended temperature range |
SGS-ATES |
| 2902 |
H104 |
Dual 4-input expandable NAND gate (active pull-up), standard temperature range |
SGS-ATES |
| 2903 |
H104 |
Dual 4-input expandable NAND gate (active pull-up), intermediate temperature range |
SGS-ATES |
| 2904 |
H104 |
Dual 4-input expandable NAND gate (active pull-up), extended temperature range |
SGS-ATES |
| 2905 |
H105 |
Dual 2-wide 2-input expandable AND-NOR gate (active pull-up), standard temperature range |
SGS-ATES |
| 2906 |
H105 |
Dual 2-wide 2-input expandable AND-NOR gate (active pull-up), intermediate temperature range |
SGS-ATES |
| 2907 |
H109 |
Dual 4-input expandable power AND gate (open collector), standard temperature range |
SGS-ATES |
| 2908 |
H109 |
Dual 4-input expandable power AND gate (open collector), intermediate temperature range |
SGS-ATES |
| 2909 |
H109 |
Dual 4-input expandable power AND gate (open collector), extended temperature range |
SGS-ATES |
| 2910 |
H113 |
Dual 2-input NAND gate plus dual expandable inverter (open-collector), standard temperature range |
SGS-ATES |
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