No. |
Part Name |
Description |
Manufacturer |
2881 |
2SB368H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
2882 |
2SB370 |
TRANSISTORS FOR AUDIO FREQUENCY OUTPUT AMPLIFIER USE |
Hitachi Semiconductor |
2883 |
2SB370 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
2884 |
2SB370A |
TRANSISTORS FOR AUDIO FREQUENCY OUTPUT AMPLIFIER USE |
Hitachi Semiconductor |
2885 |
2SB370A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
2886 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
2887 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2888 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2889 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
2890 |
2SB471 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
2891 |
2SB472 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
2892 |
2SB496 |
Germanium Transistor PNP Alloyed Junction, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
2893 |
2SB507D |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
2894 |
2SB508 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
2895 |
2SB547A |
VERTICAL DEFLECTION OUTPUT FOR COLOR TV PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
NEC |
2896 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
2897 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
2898 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2899 |
2SB75 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2900 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2901 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2902 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
2903 |
2SB77 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
2904 |
2SB77A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
2905 |
2SB816 |
PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications |
SANYO |
2906 |
2SB834 |
Power transistor for low frequency applications |
TOSHIBA |
2907 |
2SB880 |
PNP Epitaxial Planar Silicon Darlington Tranasistors For Various Drivers Applications |
SANYO |
2908 |
2SC1055H |
Transistor Silicon NPN Triple Diffused, intended for use in Power Switching Regulator |
Hitachi Semiconductor |
2909 |
2SC1059 |
Transistor Silicon NPN Triple Diffused LTP, intended for use in Class A Output Amplifier |
Hitachi Semiconductor |
2910 |
2SC1060 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
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