| No. |
Part Name |
Description |
Manufacturer |
| 3001 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 3002 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 3003 |
2SC3396 |
SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING APPLICATIONS |
SANYO |
| 3004 |
2SC3497 |
6A; 30W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 3005 |
2SC3559 |
3A; 30W; V(ceo): 800V; NPN transistor. For switching regulation |
TOSHIBA |
| 3006 |
2SC3560 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 3007 |
2SC3561 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 3008 |
2SC3562 |
10A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 3009 |
2SC3563 |
10A; 40W; V(ceo): 450V; NPN transistor. For switching regulation |
TOSHIBA |
| 3010 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 3011 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 3012 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 3013 |
2SC3625 |
8A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 3014 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3015 |
2SC3704 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3016 |
2SC3733 |
NPN transistor for power amplifier and high speed switching applications |
NEC |
| 3017 |
2SC3789 |
NPN Bipolar Transistor for CRT, Video Output Driver Applications |
ON Semiconductor |
| 3018 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 3019 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 3020 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 3021 |
2SC3829 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3022 |
2SC3852 |
Silicon NPN Epitaxial Planar Transistor(Driver for Solenoid and Motor/ Series Regulator and General Purpose) |
Sanken |
| 3023 |
2SC388ATM |
Silicon NPN transistor for TV final picture IF amplifier applications |
TOSHIBA |
| 3024 |
2SC3904 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3025 |
2SC3932 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3026 |
2SC3934 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3027 |
2SC3935 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3028 |
2SC3937 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3029 |
2SC395 |
Silicon NPN epitaxial planar transistor (PCT Process) for industrial applications |
TOSHIBA |
| 3030 |
2SC3964 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE |
TOSHIBA |
| | | |
