| No. |
Part Name |
Description |
Manufacturer |
| 3121 |
2SC5182-T2 |
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3122 |
2SC5183 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3123 |
2SC5183-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3124 |
2SC5183-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3125 |
2SC5184 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3126 |
2SC5184-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3127 |
2SC5184-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3128 |
2SC5185 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3129 |
2SC5185-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3130 |
2SC5185-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3131 |
2SC5186 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3132 |
2SC5186-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 3133 |
2SC5190 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3134 |
2SC5200N |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3135 |
2SC5216 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3136 |
2SC5248 |
Transistor for audio amplifier output stages / TV velocity modulation |
ROHM |
| 3137 |
2SC5280 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
| 3138 |
2SC5288 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 3139 |
2SC5288-T1 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 3140 |
2SC5289 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 3141 |
2SC5331 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
| 3142 |
2SC5332 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
| 3143 |
2SC5339 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
| 3144 |
2SC535 |
Silicon NPN Epitaxial Planar Transistor, intended for use in FM RF Amplifier, Frequency Converter, Local Oscillator |
Hitachi Semiconductor |
| 3145 |
2SC5351 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY. |
TOSHIBA |
| 3146 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
| 3147 |
2SC5376 |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 3148 |
2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 3149 |
2SC5376FV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3150 |
2SC5382 |
High-Voltage High-Speed Switching Transistors / Switching Transistors for Lighting |
Shindengen |
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