| No. |
Part Name |
Description |
Manufacturer |
| 2881 |
2N5064 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 2882 |
2N5071 |
24W(CW), 76-MHz Emiter-Balasted Overlay RF Power Transistor |
RCA Solid State |
| 2883 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
| 2884 |
2N5087 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE |
Continental Device India Limited |
| 2885 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
| 2886 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 2887 |
2N5172 |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE |
Continental Device India Limited |
| 2888 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 2889 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
| 2890 |
2N5193 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 2891 |
2N5194 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 2892 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 2893 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 2894 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 2895 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 2896 |
2N5294 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 2897 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 2898 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 2899 |
2N5296 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 2900 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 2901 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 2902 |
2N5298 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 2903 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
| 2904 |
2N5401 |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 2905 |
2N5401 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 2906 |
2N5401AI |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 2907 |
2N5401SAM |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 2908 |
2N5490 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 2909 |
2N5492 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 2910 |
2N5494 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
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