No. |
Part Name |
Description |
Manufacturer |
2941 |
2N6042 |
Darlington 8A plastic complementary medium-power PNP 75W transistor |
Motorola |
2942 |
2N6043 |
Darlington 8A plastic complementary medium-power NPN 75W transistor |
Motorola |
2943 |
2N6044 |
Darlington 8A plastic complementary medium-power NPN 75W transistor |
Motorola |
2944 |
2N6045 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
2945 |
2N6045 |
Darlington 8A plastic complementary medium-power NPN 75W transistor |
Motorola |
2946 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
2947 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
2948 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
2949 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
2950 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
2951 |
2N6107 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
2952 |
2N6107 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
2953 |
2N6107 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
2954 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
2955 |
2N6107-D |
Complementary Silicon Plastic Power Transistors |
ON Semiconductor |
2956 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
2957 |
2N6109 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
2958 |
2N6109 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
2959 |
2N6111 |
40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
2960 |
2N6111 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
2961 |
2N6111 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
2962 |
2N6121 |
40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. |
Continental Device India Limited |
2963 |
2N6121 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
2964 |
2N6121 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
2965 |
2N6122 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
2966 |
2N6122 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
2967 |
2N6122 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
2968 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
2969 |
2N6123 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
2970 |
2N6123 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
| | | |