No. |
Part Name |
Description |
Manufacturer |
28891 |
Q62702-A1103 |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) |
Siemens |
28892 |
Q62702-A1145 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
28893 |
Q62702-A1145 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
28894 |
Q62702-A1159 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28895 |
Q62702-A1160 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28896 |
Q62702-A1161 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28897 |
Q62702-A1162 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28898 |
Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
28899 |
Q62702-A1189 |
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply |
Siemens |
28900 |
Q62702-A1270 |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
28901 |
Q62702-A1270 |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
28902 |
Q62702-A3461 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
28903 |
Q62702-A3470 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28904 |
Q62702-A66 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) |
Siemens |
28905 |
Q62702-A879 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28906 |
Q62702-A961 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28907 |
Q62702-A962 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28908 |
Q62702-A963 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28909 |
Q62702-A964 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
28910 |
Q62702-C1507 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
28911 |
Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
28912 |
Q62702-C1688 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
28913 |
Q62702-C1698 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
28914 |
Q62702-C1742 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
28915 |
Q62702-C1761 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
28916 |
Q62702-C1773 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
28917 |
Q62702-C1774 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
28918 |
Q62702-C1850 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
28919 |
Q62702-C1851 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
28920 |
Q62702-C1886 |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
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