| No. |
Part Name |
Description |
Manufacturer |
| 29011 |
Q62702-F621 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 29012 |
Q62702-F622 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 29013 |
Q62702-F721 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 29014 |
Q62702-F722 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 29015 |
Q62702-G0071 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 29016 |
Q62702-G38 |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 29017 |
Q62702-P1163 |
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 29018 |
Q62702-P1164 |
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 29019 |
Q62702-P1165 |
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 29020 |
Q62702-P1166 |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 29021 |
Q62702-P1167 |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 29022 |
Q62702-P1168 |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 29023 |
Q62702-P419 |
��-��-��-Strahlungsdetektoren ��-��-��-Radiation Detectors |
Siemens |
| 29024 |
Q62702-P420 |
��-��-��-Strahlungsdetektoren ��-��-��-Radiation Detectors |
Siemens |
| 29025 |
Q62702-P421 |
��-��-��-Strahlungsdetektor ��-��-��-Radiation Detector |
Siemens |
| 29026 |
Q62702-P422 |
��-��-��-Strahlungsdetektor ��-��-��-Radiation Detector |
Siemens |
| 29027 |
Q62702-P429 |
��-��-��-Strahlungsdetektoren ��-��-��-Radiation Detectors |
Siemens |
| 29028 |
Q62702-P430 |
��-��-��-Strahlungsdetektoren ��-��-��-Radiation Detectors |
Siemens |
| 29029 |
Q62702-S482 |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 29030 |
Q62702-S492 |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 29031 |
Q62702-S501 |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 29032 |
Q62702-S503 |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 29033 |
Q62702-S535 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 29034 |
Q62702-S555 |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 29035 |
Q62702-S557 |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 29036 |
Q62702-S560 |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 29037 |
Q62702-S605 |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 29038 |
Q62702G-39 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
Siemens |
| 29039 |
QA80186 |
High-integration 16-bit microprocessor with burn-in |
Intel |
| 29040 |
QA80188 |
High-integration 16-bit microprocessor with burn-in |
Intel |
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