| No. |
Part Name |
Description |
Manufacturer |
| 2941 |
2SC4624 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 2942 |
2SC4838 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2943 |
2SC4989 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2944 |
2SC5125 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 2945 |
2SC5168 |
SILICON NPN DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 2946 |
2SC5169 |
DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 2947 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2948 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
| 2949 |
2SC5211 |
SILICON NPN TRANSISOR |
Isahaya Electronics Corporation |
| 2950 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2951 |
2SC5213 |
2SC5213 |
Isahaya Electronics Corporation |
| 2952 |
2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 2953 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 2954 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 2955 |
2SC5395 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 2956 |
2SC5396 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 2957 |
2SC5397 |
Silicon NPN epitaxial planar type |
Isahaya Electronics Corporation |
| 2958 |
2SC5398 |
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) |
Isahaya Electronics Corporation |
| 2959 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 2960 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 2961 |
2SC5484 |
SILICON NPN TRANSISTOR |
Isahaya Electronics Corporation |
| 2962 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 2963 |
2SC5486 |
600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE. |
Isahaya Electronics Corporation |
| 2964 |
2SC5619 |
2SC5619 |
Isahaya Electronics Corporation |
| 2965 |
2SC5620 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 2966 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2967 |
2SC5625 |
SILICON EPITAXIAL |
Isahaya Electronics Corporation |
| 2968 |
2SC5626 |
2SC5626 |
Isahaya Electronics Corporation |
| 2969 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2970 |
2SC5804 |
SMALL-SIGNAL TRANSISTOR |
Isahaya Electronics Corporation |
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