| No. |
Part Name |
Description |
Manufacturer |
| 2971 |
2SC5807 |
SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2972 |
2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 2973 |
2SC5815 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 2974 |
2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 2975 |
2SC5817 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 2976 |
2SC5882 |
SILICON NPN EPITAXIAL TRANSISTOR |
Isahaya Electronics Corporation |
| 2977 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2978 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2979 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2980 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
| 2981 |
2SC730 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2982 |
2SC741 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2983 |
2SC908 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 2984 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 2985 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 2986 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 2987 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 2988 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 2989 |
2SK105 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2990 |
2SK113 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2991 |
2SK152 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2992 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 2993 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 2994 |
2SK2973 |
MITSUBISHI RF POWER MOS FET |
Mitsubishi Electric Corporation |
| 2995 |
2SK2974 |
MITSUBISHI RF POWER MOS FET |
Mitsubishi Electric Corporation |
| 2996 |
2SK2975 |
MITSUBISHI RF POWER MOS FET |
Mitsubishi Electric Corporation |
| 2997 |
2SK363 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2998 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 2999 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 3000 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
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