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Datasheets for T TRANSIST

Datasheets found :: 5075
Page: | 96 | 97 | 98 | 99 | 100 | 101 | 102 | 103 | 104 |
No. Part Name Description Manufacturer
2971 IFN5433 N-Channel silicon junction field-effect transistor InterFET Corporation
2972 IFN5434 N-Channel silicon junction field-effect transistor InterFET Corporation
2973 IFN5564 N-Channel dual silicon junction field-effect transistor InterFET Corporation
2974 IFN5565 N-Channel dual silicon junction field-effect transistor InterFET Corporation
2975 IFN5566 N-Channel dual silicon junction field-effect transistor InterFET Corporation
2976 IFN5911 N-Channel dual silicon junction field-effect transistor InterFET Corporation
2977 IFN5912 N-Channel dual silicon junction field-effect transistor InterFET Corporation
2978 IFN6449 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
2979 IFN6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
2980 IFN860 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
2981 IMX8-7 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Diodes
2982 IN4148 Miniature Diode in glass package Newmarket Transistors NKT
2983 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
2984 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
2985 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
2986 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
2987 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
2988 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
2989 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
2990 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
2991 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
2992 IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
2993 IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
2994 IRF153 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
2995 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
2996 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
2997 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2998 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2999 IRF224 (IRF225) HEXFET Transistors International Rectifier
3000 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State


Datasheets found :: 5075
Page: | 96 | 97 | 98 | 99 | 100 | 101 | 102 | 103 | 104 |



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