No. |
Part Name |
Description |
Manufacturer |
3091 |
IRFD9020 |
HEXFET TRANSISTORS P CHANNEL HEXDIP |
International Rectifier |
3092 |
IRFD9022 |
HEXFET TRANSISTORS P CHANNEL HEXDIP |
International Rectifier |
3093 |
IRFE230 |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
3094 |
IRFF110 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. |
General Electric Solid State |
3095 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
3096 |
IRFF111 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. |
General Electric Solid State |
3097 |
IRFF112 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. |
General Electric Solid State |
3098 |
IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. |
General Electric Solid State |
3099 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
3100 |
IRFF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. |
General Electric Solid State |
3101 |
IRFF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. |
General Electric Solid State |
3102 |
IRFF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. |
General Electric Solid State |
3103 |
IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. |
General Electric Solid State |
3104 |
IRFF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. |
General Electric Solid State |
3105 |
IRFF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. |
General Electric Solid State |
3106 |
IRFF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. |
General Electric Solid State |
3107 |
IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. |
General Electric Solid State |
3108 |
IRFM250D |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
3109 |
IRFP251 |
(IRFP252 / IRFP253) N-Channel(Hexfet Transistors) |
International Rectifier |
3110 |
IRFP252 |
N-Channel(Hexfet Transistors) |
International Rectifier |
3111 |
IRFP253 |
N-Channel(Hexfet Transistors) |
International Rectifier |
3112 |
IRFR010 |
(IRFR012) HEXFET Transistors |
International Rectifier |
3113 |
IRFR220 |
N-channel enhancement mode field effect transistor |
Philips |
3114 |
IRFR9020 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
3115 |
IRFR9020 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
3116 |
IRFR9022 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
3117 |
IRFR9024 |
P-Channel Enhancement Mode Field Effect Transistor [Obsolete] |
Fairchild Semiconductor |
3118 |
IRFU9020 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
3119 |
IRFU9022 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
3120 |
IRFY240C |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
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