No. |
Part Name |
Description |
Manufacturer |
3001 |
2SD638 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
3002 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
3003 |
2SD661 |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
3004 |
2SD661 |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
3005 |
2SD661 |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
3006 |
2SD661 |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
3007 |
2SD661A |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
3008 |
2SD661A |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
3009 |
2SD661A |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
3010 |
2SD661A |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
3011 |
2SD662 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
3012 |
2SD662B |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
3013 |
2SD688 |
Silicon NPN epitaxial darlington medium power, low frequency transistor |
TOSHIBA |
3014 |
2SD689 |
Silicon NPN epitaxial darlington low frequency medium power transistor |
TOSHIBA |
3015 |
2SD75AH |
Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
3016 |
2SD75H |
Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
3017 |
2SD77AH |
Germanium NPN Alloyed Junction Transistor, intended for use in Low Speed Switching and Audio Frequency Power Output |
Hitachi Semiconductor |
3018 |
2SD77H |
Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Power Output |
Hitachi Semiconductor |
3019 |
2SD798 |
Power transistor for low frequency applications |
TOSHIBA |
3020 |
2SD814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
3021 |
2SD814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
3022 |
2SD814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
Panasonic |
3023 |
2SD814A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
3024 |
2SD874 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
3025 |
2SD874A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
3026 |
2SD875 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
3027 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
3028 |
2SD882 |
NPN medium power low vow voltage transistor |
Unisonic Technologies |
3029 |
2SD958 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
3030 |
2SD965 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
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