| No. |
Part Name |
Description |
Manufacturer |
| 3061 |
2SK2394 |
N-Channel Junction Silicon FET Low-Noise HF Amplifier Applications |
SANYO |
| 3062 |
2SK2395 |
N-Channel Junction Silicon FET Low-Noise HF Amplifier Applications |
SANYO |
| 3063 |
2SK242 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3064 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3065 |
2SK2570 |
Silicon N-Channel MOS FET Low Frequency Power Switching |
Hitachi Semiconductor |
| 3066 |
2SK2802 |
Silicon N Channel MOS FET Low Frequency Power Switching |
Hitachi Semiconductor |
| 3067 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3068 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 3069 |
2SK3000 |
Silicon N Channel MOS FET Low Frequency Power Switching |
Hitachi Semiconductor |
| 3070 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 3071 |
2SK303 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3072 |
2SK304 |
N-Channel Silicon MOSFET Low-Frequency Aplifier Applications |
SANYO |
| 3073 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 3074 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3075 |
2SK3320 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3076 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 3077 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 3078 |
2SK369 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3079 |
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3080 |
2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3081 |
2SK58 |
Silicon N-Channel Junction Type Dual FET (DC-to-VHF Use, Low Noise) |
SONY |
| 3082 |
2SK676H5 |
AlGaAs/GaAs Low Noise Microwave HEMT CHIP |
SONY |
| 3083 |
2SK677H5 |
AlGaAs/GaAs Low Noise Microwave HEMT CHIP |
SONY |
| 3084 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 3085 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 3086 |
2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 3087 |
2STF2280 |
Transistors, Power Bipolar, Low Voltage - High Performance |
ST Microelectronics |
| 3088 |
2T6551 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 3089 |
2T6551 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 3090 |
30026-13 |
Geode GXLV Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
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