No. |
Part Name |
Description |
Manufacturer |
3001 |
2N943 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
3002 |
2N944 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
3003 |
2N945 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
3004 |
2N946 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
3005 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
3006 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
3007 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
3008 |
2N962 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
3009 |
2N963 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
3010 |
2N964 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
3011 |
2N964A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
3012 |
2N965 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
3013 |
2N966 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
3014 |
2N967 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
3015 |
2N968 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
3016 |
2N969 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
3017 |
2N970 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
3018 |
2N971 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
3019 |
2N972 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
3020 |
2N973 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
3021 |
2N974 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
3022 |
2N975 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
3023 |
2N985 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
3024 |
2N995 |
PNP silicon transistor for high-frequency |
Motorola |
3025 |
2NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
3026 |
2PG302 |
For Insulated Gate Bipolar Transistor |
Panasonic |
3027 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
3028 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
3029 |
2SA1090 |
Silicon PNP epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
3030 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
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