| No. |
Part Name |
Description |
Manufacturer |
| 3091 |
2SA1977-T1 |
Transistor for amplifying PNP micro wave |
NEC |
| 3092 |
2SA1977-T1B |
Transistor for amplifying PNP micro wave |
NEC |
| 3093 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
| 3094 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 3095 |
2SA2034 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3096 |
2SA2120 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3097 |
2SA2121 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3098 |
2SA2142 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3099 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3100 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3101 |
2SA2183 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3102 |
2SA2184 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3103 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3104 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3105 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 3106 |
2SA2220 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3107 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 3108 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 3109 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3110 |
2SA3331S |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3111 |
2SA3331T |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3112 |
2SA3331U |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3113 |
2SA3331V |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3114 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 3115 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 3116 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 3117 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 3118 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
| 3119 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 3120 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
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