| No. |
Part Name |
Description |
Manufacturer |
| 3151 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 3152 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 3153 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3154 |
2SA3331S |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3155 |
2SA3331T |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3156 |
2SA3331U |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3157 |
2SA3331V |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 3158 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 3159 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 3160 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 3161 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 3162 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
| 3163 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 3164 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 3165 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 3166 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3167 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3168 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 3169 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 3170 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 3171 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 3172 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 3173 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 3174 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 3175 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 3176 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 3177 |
2SA565 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 3178 |
2SA566 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 3179 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 3180 |
2SA640 |
PNP silicon transistor designed for use in AF low noise amplifier of STEREOSET, RADIO and TAPE RECORDER |
NEC |
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