| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BAT63-099R |
Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad) |
Siemens |
| 302 |
BAT64 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 303 |
BAT64-04 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 304 |
BAT64-04W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 305 |
BAT64-05 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 306 |
BAT64-05W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 307 |
BAT64-06 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 308 |
BAT64-06W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 309 |
BAT64-07 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 310 |
BAT64-07W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 311 |
BAT64-W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 312 |
BAT64W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 313 |
BB101C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 314 |
BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 315 |
BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 316 |
BB102M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 317 |
BB301 |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 318 |
BB301C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 319 |
BB301M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 320 |
BB302C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 321 |
BB302M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 322 |
BB304C |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 323 |
BB304M |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 324 |
BB305C |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 325 |
BB305M |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 326 |
BB402M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 327 |
BB403 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 328 |
BB403M |
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
Hitachi Semiconductor |
| 329 |
BB404 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 330 |
BB404M |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| | | |
