| No. |
Part Name |
Description |
Manufacturer |
| 331 |
BB405M |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 332 |
BB501 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 333 |
BB501C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 334 |
BB501M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 335 |
BB502 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 336 |
BB502C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 337 |
BB502M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 338 |
BB503 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 339 |
BB503C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 340 |
BB503M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 341 |
BB601M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 342 |
BCR400 |
Application Considerations for the Integrated Bias Control Circuits |
Infineon |
| 343 |
BCR400R |
Active Bias Controller (AF SSIC) |
Infineon |
| 344 |
BCR400R |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 345 |
BCR400R |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 346 |
BCR400W |
Active Bias Controller (AF SSIC) |
Infineon |
| 347 |
BCR400W |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 348 |
BCR400W |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 349 |
BCR401 |
LED Driver(Supplies stable bias current even at low battery voltage) |
Infineon |
| 350 |
BCR410 |
Active Bias Controller |
Infineon |
| 351 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 352 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 353 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 354 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 355 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 356 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 357 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 358 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 359 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 360 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
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