| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2R5TPE220MAPB |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TPE |
Panasonic |
| 302 |
2R5TPE220MAZB |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TPE |
Panasonic |
| 303 |
2R5TPE330MAZB |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TPE |
Panasonic |
| 304 |
2SA1209 |
160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 305 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 306 |
2SA1248 |
160V/700mA Switching Applications |
SANYO |
| 307 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 308 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 309 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 310 |
2SA1477 |
PNP Epitaxial Planar Silicon Transistors 160V/140mA Switching Applications |
SANYO |
| 311 |
2SA1576UBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 312 |
2SA1576UBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 313 |
2SA1769 |
160V/700mA Switching Applications |
SANYO |
| 314 |
2SA1774EBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 315 |
2SA1774EBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 316 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 317 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 318 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 319 |
2SA673AB |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 320 |
2SA673AC |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 321 |
2SA673AD |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 322 |
2SA673B |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 323 |
2SA673C |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 324 |
2SA673D |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 325 |
2SAR340P |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 326 |
2SAR340PT100 |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 327 |
2SAR340Q |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 328 |
2SAR340QTR |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 329 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 330 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
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