No. |
Part Name |
Description |
Manufacturer |
331 |
2SC1213AB |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
332 |
2SC1213AB |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
333 |
2SC1213AC |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
334 |
2SC1213AC |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
335 |
2SC1213AD |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
336 |
2SC1213AD |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
337 |
2SC1213AKB |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
338 |
2SC1213AKB |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
339 |
2SC1213AKC |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
340 |
2SC1213AKC |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
341 |
2SC1213AKD |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
342 |
2SC1213AKD |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
343 |
2SC1213B |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
344 |
2SC1213B |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
345 |
2SC1213C |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
346 |
2SC1213C |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
347 |
2SC1213D |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
348 |
2SC1213D |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
349 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
350 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
351 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
352 |
2SC2911 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
353 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
354 |
2SC3116 |
NPN Epitaxial Planar Silicon Transistors 160V/700mA Switching Applications |
SANYO |
355 |
2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 |
Isahaya Electronics Corporation |
356 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
357 |
2SC3245A |
900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A |
Isahaya Electronics Corporation |
358 |
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 |
Isahaya Electronics Corporation |
359 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
360 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
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