| No. |
Part Name |
Description |
Manufacturer |
| 301 |
CZRL4751A |
1 watt surface mount zener diode. Nom zener voltage 30 V. Tolerance +-5 %. |
Comchip Technology |
| 302 |
DJB5821 |
30 volt (working peak reverse voltage), 3 AMP schottky barrier rectifier |
Compensated Devices Incorporated |
| 303 |
FDLL4152 |
High speed diode. Working inverse voltage 30 V. |
Fairchild Semiconductor |
| 304 |
FDLL4450 |
High conductance ultra fast diode. Working inverse voltage 30 V. |
Fairchild Semiconductor |
| 305 |
FDPC8013S |
30 V Asymmetric Dual N-Channel MOSFET PowerTrench� Power Clip |
Fairchild Semiconductor |
| 306 |
FDS6679 |
30 Volt P-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 307 |
FDS6679Z |
30 Volt P-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 308 |
FDS6679_NL |
30 Volt P-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 309 |
FDS6681Z |
30 Volt P-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 310 |
FDS6681Z |
30 Volt P-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 311 |
FDZ208P |
P-Channel 30 Volt PowerTrench BGA MOSFET |
Fairchild Semiconductor |
| 312 |
FM5821-A |
30 V, chip schottky barrier diode |
Formosa MS |
| 313 |
FST8230EL |
80 Amp Rectifier 30 Volts Schottky Barrier |
Micro Commercial Components |
| 314 |
FW906 |
Power MOSFET 30 V, 8.0 A, 24 mOhm Complementary |
ON Semiconductor |
| 315 |
FZ100B |
LSL components for input voltages up to 30 V |
Siemens |
| 316 |
G696H330T1 |
3.30 V, 5.0 mA, microprocessor reset IC |
Global Mixed-mode Technology |
| 317 |
G696L330T1 |
3.30 V, 5.0 mA, microprocessor reset IC |
Global Mixed-mode Technology |
| 318 |
G697L330T1 |
3.30 V, 5.0 mA, microprocessor reset IC |
Global Mixed-mode Technology |
| 319 |
GC1500A |
30 VOLT ABRUPT JUNCTION VARACTOR DIODES |
Microsemi |
| 320 |
HN_BC328 |
30 V, PNP silicon expitaxial planar transistor |
Honey Technology |
| 321 |
HN_BC338 |
30 V, NPN silicon expitaxial planar transistor |
Honey Technology |
| 322 |
HN_BC549 |
30 V, NPN silicon expitaxial planar transistor |
Honey Technology |
| 323 |
HN_BC559 |
30 V, PNP silicon expitaxial planar transistor |
Honey Technology |
| 324 |
KP1830 |
C-values 100 pF - 0.033 µF, Voltage 63 - 630 VDC, High pulse load, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
| 325 |
KSC1173 |
30 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 326 |
KSC2735 |
30 V, 20 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 327 |
KSC2736 |
30 V, 30 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 328 |
KSC2737 |
30 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 329 |
KSC2738 |
30 V, 20 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 330 |
KSC2739 |
30 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
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