| No. |
Part Name |
Description |
Manufacturer |
| 391 |
MAX6403BS46-T |
4.630 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
| 392 |
MAX6404BS46-T |
4.630 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
| 393 |
MAX6405BS46-T |
4.630 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
| 394 |
MBD301 |
30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
Motorola |
| 395 |
MBD301LT1 |
30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
Motorola |
| 396 |
MBD54DWT1 |
30 VOLTS DUAL HOT.CARRIER DETECTOR AND SWITCHING DIODES |
Motorola |
| 397 |
MBR0530T1 |
SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 30 VOLTS |
Motorola |
| 398 |
MBR0530T3 |
SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 30 VOLTS |
Motorola |
| 399 |
MC44871 |
PLL TUNING CIRCUIT WITH HIGH SPEED I2C BUS AND 30 V TUNING SUPPLY |
Motorola |
| 400 |
MC44871DTB |
PLL TUNING CIRCUIT WITH HIGH SPEED I2C BUS AND 30 V TUNING SUPPLY |
Motorola |
| 401 |
MC551-30 |
30 Volts 0.5 Amp Surface Mount Schottky Barrier Diode |
Micro Commercial Components |
| 402 |
MCA230 |
30 V, photodarlington optocoupler |
General Instruments |
| 403 |
MCA231 |
30 V, photodarlington optocoupler |
General Instruments |
| 404 |
MCR202 |
Silicon controlled rectifier. Reverse blocking triode thyristor. Peak off-state and reverse voltage 30 V. RMS on-state current 0.5 A. |
Motorola |
| 405 |
MGP15N43CL-D |
Ignition IGBT 15 Amps, 430 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
| 406 |
MGSF1N03L |
Power MOSFET 750 mAmps, 30 Volts |
ON Semiconductor |
| 407 |
MGSF1N03LT1 |
Power MOSFET 750 mAmps, 30 Volts |
ON Semiconductor |
| 408 |
MGSF1N03LT1G |
Power MOSFET 750 mAmps, 30 Volts |
ON Semiconductor |
| 409 |
MGSF1N03LT3 |
Power MOSFET 750 mAmps, 30 Volts |
ON Semiconductor |
| 410 |
MGSF1N03LT3G |
Power MOSFET 750 mAmps, 30 Volts |
ON Semiconductor |
| 411 |
MKP 1839 |
C-values 1000 pF - 10 µF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL |
Vishay |
| 412 |
MKP 1840 |
C-values 4700 pF - 10 µF, Voltage 100 - 630 VDC, Low losses, Low dielectric absorption, PCM 5-37.5 |
Vishay |
| 413 |
MMBD301T1 |
30 V, schottky barrier diode |
Leshan Radio Company |
| 414 |
MMBF1374T1-D |
Small Signal MOSFET 50 mAmps, 30 Volts N-Channel SC-70/SOT-323 |
ON Semiconductor |
| 415 |
MMBT4124 |
30 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 416 |
MMBT4124 |
30 V, NPN small signal surface mount transistor |
TRANSYS Electronics Limited |
| 417 |
MMBT489LT1 |
30 VOLTS 2.0 AMPS NPN TRANSISTOR |
ON Semiconductor |
| 418 |
MMBT5089 |
30 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 419 |
MMBV105G |
Silicon voltage variable capacitance (EPICAP) diode 30 volts |
Motorola |
| 420 |
MMBV105GL |
Silicon voltage variable capacitance (EPICAP) diode 30 volts |
Motorola |
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