| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N3792 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 302 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 303 |
2N381 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 304 |
2N382 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 305 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 306 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 307 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 308 |
2N383 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 309 |
2N3883 |
Medium-current, germanium PNP high-speed switching transistor |
Motorola |
| 310 |
2N397 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 311 |
2N404 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 312 |
2N4347 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 313 |
2N4348 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 314 |
2N4391 |
High-speed switching and chopper N-Channel silicon junction Field-Effect Transistor |
NEC |
| 315 |
2N4392 |
High-speed switching and chopper N-Channel silicon junction Field-Effect Transistor |
NEC |
| 316 |
2N4393 |
High-speed switching and chopper N-Channel silicon junction Field-Effect Transistor |
NEC |
| 317 |
2N4420 |
High-Speed NPN silicon saturated switching transistor |
ITT Semiconductors |
| 318 |
2N4421 |
High-Speed NPN silicon saturated switching transistor |
ITT Semiconductors |
| 319 |
2N4422 |
High-Speed NPN silicon saturated switching transistor |
ITT Semiconductors |
| 320 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 321 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 322 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 323 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 324 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 325 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 326 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
| 327 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 328 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 329 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 330 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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