| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 362 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 363 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 364 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 365 |
2N6099 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM141 |
SESCOSEM |
| 366 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 367 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 368 |
2N6101 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM142 |
SESCOSEM |
| 369 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 370 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 371 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 372 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 373 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 374 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 375 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 376 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 377 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 378 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 379 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 380 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 381 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 382 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 383 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 384 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 385 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 386 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 387 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 388 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 389 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 390 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
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