No. |
Part Name |
Description |
Manufacturer |
301 |
2N5551 |
NPN high-voltage transistors |
Philips |
302 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
303 |
2N5551S |
High Voltage Transistor |
Korea Electronics (KEC) |
304 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
305 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
306 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
307 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
308 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
309 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
310 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
311 |
2N5871 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
312 |
2N5871/1 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
313 |
2N5871/2 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
314 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
315 |
2N5872A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
316 |
2N5872B |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
317 |
2N5873 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
318 |
2N5873/1 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
319 |
2N5873/2 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
320 |
2N5874 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
321 |
2N5874A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
322 |
2N5874B |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
323 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
324 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
325 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
326 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
327 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
328 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
329 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
330 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
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