| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 332 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 333 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 334 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 335 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 336 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 337 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 338 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 339 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 340 |
2N6257 |
TO-3 Power Package Transistors (NPN) |
Unknow |
| 341 |
2N6338A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 342 |
2N6339A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 343 |
2N6340A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 344 |
2N6341A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 345 |
2N6371HV |
TO-3 Power Package Transistors (NPN) |
Unknow |
| 346 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 347 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 348 |
2N6438A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 349 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 350 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 351 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
| 352 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 353 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
| 354 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
| 355 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 356 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 357 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 358 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 359 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
| 360 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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