| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N3055A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS |
Motorola |
| 302 |
2N3055A-D |
Complementary Silicon High-Power Transistors |
ON Semiconductor |
| 303 |
2N3055G |
Complementary Silicon Power Transistors |
ON Semiconductor |
| 304 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 305 |
2N3055S |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX18 |
SESCOSEM |
| 306 |
2N3055_MJ2955 |
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS |
Motorola |
| 307 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 308 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 309 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
| 310 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 311 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
| 312 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 313 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 314 |
2N3442 |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX20 |
SESCOSEM |
| 315 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 316 |
2N3485 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 317 |
2N3485A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 318 |
2N3486 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 319 |
2N3486A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 320 |
2N3496 |
0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 321 |
2N3497 |
0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 322 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 323 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
| 324 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
| 325 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
| 326 |
2N3583 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 327 |
2N3583 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
| 328 |
2N3584 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 329 |
2N3584 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 330 |
2N3585 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
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