| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 422 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 423 |
2N5492 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 |
SESCOSEM |
| 424 |
2N5494 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6111 |
SESCOSEM |
| 425 |
2N5496 |
50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE |
Continental Device India Limited |
| 426 |
2N5496 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6107 |
SESCOSEM |
| 427 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
| 428 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 429 |
2N5629 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Central Semiconductor |
| 430 |
2N5629 |
16A power NPN transistor complementary silicon 200W |
Motorola |
| 431 |
2N5630 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Central Semiconductor |
| 432 |
2N5632 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
| 433 |
2N5633 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
| 434 |
2N5634 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
| 435 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 436 |
2N5679 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
| 437 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 438 |
2N5680 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
| 439 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 440 |
2N5681 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
| 441 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 442 |
2N5682 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
| 443 |
2N5683 |
50A complementary silicon high-current, power PNP transistor 300W |
Motorola |
| 444 |
2N5684 |
50A complementary silicon high-current, power PNP transistor 300W |
Motorola |
| 445 |
2N5684-D |
High-Current Complementary Silicon Power Transistors |
ON Semiconductor |
| 446 |
2N5685 |
50A complementary silicon high-current, power NPN transistor 300W |
Motorola |
| 447 |
2N5686 |
50A complementary silicon high-current, power NPN transistor 300W |
Motorola |
| 448 |
2N5770 |
0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE |
Continental Device India Limited |
| 449 |
2N5875 |
10A complementary silicon power PNP transistor 150W |
Motorola |
| 450 |
2N5876 |
10A complementary silicon power PNP transistor 150W |
Motorola |
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