| No. |
Part Name |
Description |
Manufacturer |
| 301 |
HM514800RR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 302 |
HM514800TT-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 303 |
HM514800TT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 304 |
HM514800TT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 305 |
HM514800ZP-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 306 |
HM514800ZP-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 307 |
HM514800ZP-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 308 |
HM5164165F |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 309 |
HM5164165FJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 310 |
HM5164165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 311 |
HM5164165FLJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 312 |
HM5164165FLJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 313 |
HM5164165FLTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 314 |
HM5164165FLTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 315 |
HM5164165FTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 316 |
HM5164165FTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 317 |
HM5164165J-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 318 |
HM5164165J-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 319 |
HM5164165LJ-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 320 |
HM5164165LJ-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 321 |
HM5164165LTT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 322 |
HM5164165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 323 |
HM5164165TT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 324 |
HM5164165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 325 |
HM5164405FJ-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
| 326 |
HM5164405FJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 327 |
HM5164405FLJ-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
| 328 |
HM5164405FLJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 329 |
HM5164405FLTT-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
| 330 |
HM5164405FLTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
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