No. |
Part Name |
Description |
Manufacturer |
331 |
HM5164405FTT-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
332 |
HM5164405FTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
333 |
HM5165165F |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
334 |
HM5165165FJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
335 |
HM5165165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
336 |
HM5165165FLJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
337 |
HM5165165FLJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
338 |
HM5165165FLTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
339 |
HM5165165FLTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
340 |
HM5165165FTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
341 |
HM5165165FTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
342 |
HM5165165J-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
343 |
HM5165165J-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
344 |
HM5165165LJ-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
345 |
HM5165165LJ-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
346 |
HM5165165LTT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
347 |
HM5165165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
348 |
HM5165165TT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
349 |
HM5165165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
350 |
HM5165405FJ-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
351 |
HM5165405FJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
352 |
HM5165405FLJ-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
353 |
HM5165405FLJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
354 |
HM5165405FLTT-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
355 |
HM5165405FLTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
356 |
HM5165405FTT-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
357 |
HM5165405FTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
358 |
HM51S4260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
359 |
HM51S4260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
360 |
HM51S4260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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