| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
| 302 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
| 303 |
2N7000 |
Medium Power MOSFETS |
Micro Commercial Components |
| 304 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
| 305 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 306 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 307 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 308 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 309 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 310 |
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 311 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 312 |
2SA1515 |
Medium Power Transistor |
ROHM |
| 313 |
2SA1727 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 314 |
2SA1759 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 315 |
2SA1776 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 316 |
2SA1797 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 317 |
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 318 |
2SA1812 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 319 |
2SA1834 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 320 |
2SA1862 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 321 |
2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 322 |
2SA1900 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 323 |
2SA1952 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 324 |
2SA1979 |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
| 325 |
2SA1979M |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
| 326 |
2SA1979S |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
| 327 |
2SA1979SF |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
| 328 |
2SA1979U |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
| 329 |
2SA1979UF |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
| 330 |
2SA2048 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| | | |
