| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2SB772 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
| 422 |
2SB772S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
| 423 |
2SB822 |
Medium power Transistor(-32V/ -2A) |
ROHM |
| 424 |
2SB889F |
MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
Unknow |
| 425 |
2SB891F |
Medium Power Transistor |
ROHM |
| 426 |
2SB899F |
MEDIUM POWER TRANSISTOR |
ROHM |
| 427 |
2SB911M |
Medium power Transistor(-32V/ -2A) |
ROHM |
| 428 |
2SC1008 |
Medium Power Amplifiers and Switches |
Unknow |
| 429 |
2SC1175 |
Medium Power Amplifiers and Switches |
Unknow |
| 430 |
2SC1209 |
Medium Power Amplifiers and Switches |
Unknow |
| 431 |
2SC1252 |
NPN medium power UHF-VHF transistor (This datasheet of NE74114 is also the datasheet of 2SC1252, see the Electrical Characteristics table) |
NEC |
| 432 |
2SC1347 |
Medium Power Amplifiers and Switches |
Unknow |
| 433 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
| 434 |
2SC1426 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC1426, see the Electrical Characteristics table) |
NEC |
| 435 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 436 |
2SC1626 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 437 |
2SC1652 |
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 438 |
2SC1672 |
Medium Power Amplifiers and Switches |
Unknow |
| 439 |
2SC1788 |
Medium Power Amplifiers and Switches |
Unknow |
| 440 |
2SC1851 |
Medium Power Amplifiers and Switches |
Unknow |
| 441 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 442 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 443 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 444 |
2SC2952 |
NPN medium power microwave transistor (This datasheet of NE24615 is also the datasheet of 2SC2952, see the Electrical Characteristics table) |
NEC |
| 445 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 446 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 447 |
2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications |
TOSHIBA |
| 448 |
2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 449 |
2SC3419 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 450 |
2SC3420 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
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