| No. |
Part Name |
Description |
Manufacturer |
| 301 |
1N5606 |
General Purpose Silicon Diode |
ITT Semiconductors |
| 302 |
1N5607 |
General Purpose Silicon Diode |
ITT Semiconductors |
| 303 |
1N5608 |
General Purpose Silicon Diode |
ITT Semiconductors |
| 304 |
1N5609 |
General Purpose Silicon Diode |
ITT Semiconductors |
| 305 |
1N5719 |
SILICON PIN DIODE |
Advanced Semiconductor |
| 306 |
1N5767 |
PIN Diode |
Microsemi |
| 307 |
1N5796 |
GENERAL PURPOSE SILICON DIODES |
Microsemi |
| 308 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 309 |
1N5830 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 310 |
1N5831 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 311 |
1N5832 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 312 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 313 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 314 |
1N5957 |
PIN Diode |
Microsemi |
| 315 |
1N61A1 |
Silicon diffused junction rectifier |
TOSHIBA |
| 316 |
1N625 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 317 |
1N6263 |
Leaded Silicon Diode Schottky |
Central Semiconductor |
| 318 |
1N645 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 319 |
1N645 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 320 |
1N646 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 321 |
1N647 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 322 |
1N647 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 323 |
1N648 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 324 |
1N649 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 325 |
1N649 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 326 |
1N658 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
| 327 |
1N659 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 328 |
1N660 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
| 329 |
1N661 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
| 330 |
1N662 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
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