| No. |
Part Name |
Description |
Manufacturer |
| 421 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 422 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 423 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 424 |
1S1941 |
Silicon diffused junction rectifier 0.5A 100V |
TOSHIBA |
| 425 |
1S1942 |
Silicon diffused junction rectifier 0.5A 200V |
TOSHIBA |
| 426 |
1S1943 |
Silicon diffused junction rectifier 0.5A 400V |
TOSHIBA |
| 427 |
1S1944 |
Silicon diffused junction rectifier 0.5A 600V |
TOSHIBA |
| 428 |
1S2233 |
Silicon diffused junction rectifier 1.5A 600V |
TOSHIBA |
| 429 |
1S2234 |
Silicon diffused junction rectifier 1.5A 800V |
TOSHIBA |
| 430 |
1S2235 |
Silicon diffused junction rectifier 1.5A 1000V |
TOSHIBA |
| 431 |
1S2237B |
Silicon diffused junction high-voltage rectifier, 18kV |
TOSHIBA |
| 432 |
1S2576 |
Silicon diffused junction rectifier 1A 100V |
TOSHIBA |
| 433 |
1S2577 |
Silicon diffused junction rectifier 1A 200V |
TOSHIBA |
| 434 |
1S2578 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
| 435 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 436 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 437 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 438 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 439 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 440 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
| 441 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 442 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
| 443 |
1S2615 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 444 |
1S2616 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 445 |
1S2617 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 446 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 447 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 448 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 449 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 450 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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