| No. |
Part Name |
Description |
Manufacturer |
| 301 |
1N5538BUR |
Zener Voltage Regulator Diode |
Microsemi |
| 302 |
1N5538BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 303 |
1N5538BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 304 |
1N5538C |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 305 |
1N5538C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 306 |
1N5538C |
Diode Zener Single 18V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 307 |
1N5538C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 308 |
1N5538C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 309 |
1N5538CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 310 |
1N5538CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 311 |
1N5538D |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 312 |
1N5538D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 313 |
1N5538D |
Diode Zener Single 18V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 314 |
1N5538D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 315 |
1N5538D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 316 |
1N5538DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 317 |
1N5538DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 318 |
1N5539 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 319 |
1N5539 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 320 |
1N5539 |
Low Voltage Avalanche Zener |
Microsemi |
| 321 |
1N5539 |
Diode Zener Single 19V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 322 |
1N5539A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 323 |
1N5539A |
Low Voltage Avalanche Zener |
Microsemi |
| 324 |
1N5539A |
Diode Zener Single 19V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 325 |
1N5539A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 326 |
1N5539A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 327 |
1N5539B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 328 |
1N5539B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 329 |
1N5539B |
Low Voltage Avalanche Zener |
Microsemi |
| 330 |
1N5539B |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
