No. |
Part Name |
Description |
Manufacturer |
331 |
1N5539B |
Diode Zener Single 19V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
332 |
1N5539B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
333 |
1N5539B-1 |
Low Voltage Avalanche Zener |
Microsemi |
334 |
1N5539B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
335 |
1N5539BUR |
Zener Voltage Regulator Diode |
Microsemi |
336 |
1N5539BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
337 |
1N5539BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
338 |
1N5539C |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
339 |
1N5539C |
Diode Zener Single 19V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
340 |
1N5539C-1 |
Low Voltage Avalanche Zener |
Microsemi |
341 |
1N5539C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
342 |
1N5539CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
343 |
1N5539CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
344 |
1N5539D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
345 |
1N5539D |
Diode Zener Single 19V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
346 |
1N5539D-1 |
Low Voltage Avalanche Zener |
Microsemi |
347 |
1N5539D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
348 |
1N5539DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
349 |
1N5539DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
350 |
2N553 |
Germanium PNP Transistor |
Motorola |
351 |
2N5530 |
Silicon NPN Transistor |
Motorola |
352 |
2N5530 |
Trans GP BJT NPN 130V 20A 3-Pin TO-63 |
New Jersey Semiconductor |
353 |
2N5531 |
Silicon NPN Transistor |
Motorola |
354 |
2N5532 |
Silicon NPN Transistor |
Motorola |
355 |
2N5533 |
Silicon NPN Transistor |
Motorola |
356 |
2N5533 |
Trans GP BJT NPN 130V 20A 3-Pin TO-63 |
New Jersey Semiconductor |
357 |
2N5534 |
Silicon NPN Transistor |
Motorola |
358 |
2N5534 |
Trans GP BJT NPN 130V 20A 3-Pin TO-63 |
New Jersey Semiconductor |
359 |
2N5535 |
Silicon NPN Transistor |
Motorola |
360 |
2N5536 |
Silicon NPN Transistor |
Motorola |
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