No. |
Part Name |
Description |
Manufacturer |
301 |
ELJRF5N1DFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
302 |
ELJRF5N1ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
303 |
ELJRF5N6DFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
304 |
ELJRF5N6ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
305 |
ELJRF68NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
306 |
ELJRF68NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
307 |
ELJRF6N2DFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
308 |
ELJRF6N2ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
309 |
ELJRF6N8JFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
310 |
ELJRF6N8ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
311 |
ELJRF7N5JFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
312 |
ELJRF7N5ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
313 |
ELJRF82NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
314 |
ELJRF82NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
315 |
ELJRF8N2JFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
316 |
ELJRF8N2ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
317 |
ELJRF9N1JFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
318 |
ELJRF9N1ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
319 |
ELJRFR10GFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
320 |
ELJRFR10JFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
321 |
HBC4730A |
Ajustable 23 stage freq. divider 0.5Hz out. |
SGS-ATES |
322 |
HBC4731A |
Ajustable 16 stage freq. divider 64Hz out. |
SGS-ATES |
323 |
HBF4730A |
Ajustable 23 stage freq. divider 0.5Hz out. |
SGS-ATES |
324 |
HBF4731A |
Ajustable 16 stage freq. divider 64Hz out. |
SGS-ATES |
325 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
326 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
327 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
328 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
329 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
330 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
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