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Datasheets for REQ.

Datasheets found :: 375
Page: | 8 | 9 | 10 | 11 | 12 | 13 |
No. Part Name Description Manufacturer
331 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
332 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
333 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
334 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
335 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
336 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
337 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
338 K4R271869B-MCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
339 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
340 K4R271869B-NCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
341 K4R271869B-NCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
342 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
343 K4R441869AM-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
344 K4R441869AM-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
345 K4R441869AN-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
346 K4R441869AN-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
347 K4R441869AN-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
348 KM416L8031BT-F0 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. Samsung Electronic
349 KM416L8031BT-FY 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. Samsung Electronic
350 KM416L8031BT-FZ 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. Samsung Electronic
351 KM416L8031BT-G0 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. Samsung Electronic
352 KM416L8031BT-GY 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. Samsung Electronic
353 KM416L8031BT-GZ 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. Samsung Electronic
354 KM44L32031BT-F0 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. Samsung Electronic
355 KM44L32031BT-FY 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. Samsung Electronic
356 KM44L32031BT-FZ 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. Samsung Electronic
357 KM44L32031BT-G0 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. Samsung Electronic
358 KM44L32031BT-GY 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. Samsung Electronic
359 KM44L32031BT-GZ 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. Samsung Electronic
360 KM44S3203BT-G_F10 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). Samsung Electronic


Datasheets found :: 375
Page: | 8 | 9 | 10 | 11 | 12 | 13 |



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