No. |
Part Name |
Description |
Manufacturer |
301 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
302 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
303 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
304 |
1516-35 |
35 W, 28 V, 1450-1550 MHz common base transistor |
GHz Technology |
305 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
306 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
307 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
308 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
309 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
310 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
311 |
1528-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
312 |
1528-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
313 |
1530-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
314 |
1530-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
315 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
316 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
317 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
318 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
319 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
320 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
321 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
322 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
323 |
15C02CH |
NPN EPITAXIAL SILICON TRANSISTOR |
SANYO |
324 |
16008B |
16008B Resistivity Cell |
Agilent (Hewlett-Packard) |
325 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
326 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
327 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
328 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
329 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
330 |
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor |
GHz Technology |
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