| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1719-2 |
2 W, 2 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 332 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 333 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
| 334 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 335 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 336 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 337 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 338 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 339 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 340 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 341 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 342 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 343 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 344 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 345 |
1815 |
NPN general purpose transistor |
Philips |
| 346 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 347 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 348 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 349 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 350 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 351 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 352 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 353 |
182T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 354 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 355 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 356 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 357 |
183T2 |
180V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 358 |
183T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 359 |
184T2 |
200V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 360 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| | | |
