| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BDX29 |
NPN Transistor industrial type |
Siemens |
| 302 |
BDX30 |
NPN Transistor industrial type |
Siemens |
| 303 |
BDY12 |
NPN Transistor industrial type |
Siemens |
| 304 |
BDY13 |
NPN Transistor industrial type |
Siemens |
| 305 |
BDY39 |
NPN Transistor industrial type |
Siemens |
| 306 |
BDY87 |
NPN Transistor industrial type |
Siemens |
| 307 |
BDY88 |
NPN Transistor industrial type |
Siemens |
| 308 |
BDY89 |
NPN Transistor industrial type |
Siemens |
| 309 |
BF177 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
| 310 |
BF178 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
| 311 |
BF184 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
| 312 |
BF185 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
| 313 |
BF679S |
Epitaxial planar PNP transistor intended for use as UHF-VHF amplifier up to 900MHz |
SGS-ATES |
| 314 |
BF680 |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
| 315 |
BF680A |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
| 316 |
BF680H |
Epitaxial planar PNP transistor intended for use as UHF oscillator |
SGS-ATES |
| 317 |
BFP360W |
RF-Bipolar - NPN Silicon RF transistor in 4pin SOT343 package ideal for Oscillators and VCOs up to 4GHz |
Infineon |
| 318 |
BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package |
Infineon |
| 319 |
BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4 |
Infineon |
| 320 |
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA |
Infineon |
| 321 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
| 322 |
BFQ32 |
Silicon planar epitaxial PNP transistor in a subminiature plastic transfer-moulded T-package, intended for use in UHF and microwave |
Philips |
| 323 |
BFQ88 |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 324 |
BFQ88A |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 325 |
BFR14A |
NPN Transistor industrial type |
Siemens |
| 326 |
BFR15 |
NPN Transistor industrial type |
Siemens |
| 327 |
BFR28 |
NPN Transistor industrial type |
Siemens |
| 328 |
BFR34 |
NPN Transistor industrial type |
Siemens |
| 329 |
BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
| 330 |
BFR340L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
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