| No. |
Part Name |
Description |
Manufacturer |
| 361 |
BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 362 |
BFS38A |
General purpose NPN transistor in Micro-E case |
FERRANTI |
| 363 |
BFS39 |
General purpose NPN transistor in Micro-E case |
FERRANTI |
| 364 |
BFS40 |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 365 |
BFS40A |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 366 |
BFS41 |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 367 |
BFS42 |
General purpose NPN transistor in Micro-E case |
FERRANTI |
| 368 |
BFS43 |
General purpose NPN transistor in Micro-E case |
FERRANTI |
| 369 |
BFS44 |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 370 |
BFS45 |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 371 |
BFS46 |
High frequency NPN transistor in Micro-E case |
FERRANTI |
| 372 |
BFS460L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 373 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 374 |
BFS469L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 375 |
BFS46A |
High frequency NPN transistor in Micro-E case |
FERRANTI |
| 376 |
BFS55 |
NPN Transistor industrial type |
Siemens |
| 377 |
BFS85 |
High frequency NPN transistor in Micro-E case |
FERRANTI |
| 378 |
BFS88 |
High frequency NPN transistor in Micro-E case |
FERRANTI |
| 379 |
BFT12 |
NPN Transistor industrial type |
Siemens |
| 380 |
BFT27 |
General purpose NPN transistor in Micro-E case |
FERRANTI |
| 381 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 382 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 383 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 384 |
BFT96 |
Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz |
SGS-ATES |
| 385 |
BFW16A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 386 |
BFW16A |
NPN Transistor industrial type |
Siemens |
| 387 |
BFW17A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 388 |
BFW30 |
NPN Transistor industrial type |
Siemens |
| 389 |
BFW45 |
NPN silicon transistor intended for the output stage of the horizontal deflection amplifier |
ICCE |
| 390 |
BFW92 |
NPN Transistor industrial type |
Siemens |
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