| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SB434 |
Audio Frequency Transistor |
TOSHIBA |
| 302 |
2SB435 |
Audio Frequency Transistor |
TOSHIBA |
| 303 |
2SB439 |
Audio Frequency Transistor |
TOSHIBA |
| 304 |
2SB440 |
Audio Frequency Transistor |
TOSHIBA |
| 305 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 306 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 307 |
2SB461 |
Germanium PNP alloy junction transistor, audio medium power amplifier, strobo flash applications |
TOSHIBA |
| 308 |
2SB463 |
Audio Frequency Transistor |
TOSHIBA |
| 309 |
2SB471 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 310 |
2SB471 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 311 |
2SB472 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 312 |
2SB472 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 313 |
2SB502 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
| 314 |
2SB502A |
Silicon PNP triple diffused audio power transistor |
TOSHIBA |
| 315 |
2SB503 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
| 316 |
2SB503A |
Silicon PNP triple diffused audio power transistor |
TOSHIBA |
| 317 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 318 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 319 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 320 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 321 |
2SB539A |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 322 |
2SB539B |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 323 |
2SB539C |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 324 |
2SB54 |
Audio Frequency Transistor |
TOSHIBA |
| 325 |
2SB54 |
Germanium PNP alloy junction audio transistor |
TOSHIBA |
| 326 |
2SB541 |
Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor |
NEC |
| 327 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
| 328 |
2SB56 |
Audio Frequency Transistor |
TOSHIBA |
| 329 |
2SB56 |
Germanium PNP alloy junction transistor, audio low power amplifier applications |
TOSHIBA |
| 330 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
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