| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 212 |
2SA496 |
Audio Frequency Transistor |
TOSHIBA |
| 213 |
2SA497 |
Audio Frequency Transistor |
TOSHIBA |
| 214 |
2SA498 |
Audio Frequency Transistor |
TOSHIBA |
| 215 |
2SA505 |
Audio Frequency Transistor |
TOSHIBA |
| 216 |
2SA509 |
Audio Frequency Transistor |
TOSHIBA |
| 217 |
2SA561 |
Audio Frequency Transistor |
TOSHIBA |
| 218 |
2SA562 |
Audio Frequency Transistor |
TOSHIBA |
| 219 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 220 |
2SA564 |
Audio Frequency Small Signal Transistors |
Semiconductor Technology |
| 221 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 222 |
2SA661 |
Audio Frequency Transistor |
TOSHIBA |
| 223 |
2SA663 |
Audio Frequency Transistor |
TOSHIBA |
| 224 |
2SA763 |
PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 225 |
2SA811 |
Audio frequency high gain amplifier PNP silicon epitaxial transistor |
NEC |
| 226 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 227 |
2SA812 |
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 228 |
2SA812R |
PNP silicon epitaxial transistor, audio frequency |
NEC |
| 229 |
2SA817 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 230 |
2SA928A |
PNP transistor for audio power amplifier, collector-emitter voltage=30V, collector current =2A |
Unisonic Technologies |
| 231 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 232 |
2SA942 |
90V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 233 |
2SA949 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONS |
TOSHIBA |
| 234 |
2SA950 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 235 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
| 236 |
2SA966 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 237 |
2SA970 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
| 238 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 239 |
2SB1015 |
Silicon PNP triple diffused audio frequency power transistor |
TOSHIBA |
| 240 |
2SB1015 |
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| | | |
