No. |
Part Name |
Description |
Manufacturer |
91 |
2N5874B |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
92 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
93 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
94 |
2N650 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
95 |
2N650A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
96 |
2N651 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
97 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
98 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
99 |
2N652A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
100 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
101 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
102 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
103 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
104 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
105 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
106 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
107 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
108 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
109 |
2N697 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
110 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
111 |
2N929 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
112 |
2N930 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
113 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
114 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
115 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
116 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
117 |
2SA1015L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
118 |
2SA1048 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
119 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
120 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
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