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Datasheets for UDI

Datasheets found :: 11483
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No. Part Name Description Manufacturer
91 2N5874B Silicon NPN EPIBASE Audiofrequency power transistor IPRS Baneasa
92 2N6030 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
93 2N6031 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
94 2N650 PNP Germanium transistor in the audio-frequency range applications Motorola
95 2N650A PNP Germanium transistor in the audio-frequency range applications Motorola
96 2N651 PNP Germanium transistor in the audio-frequency range applications Motorola
97 2N651A PNP Germanium transistor in the audio-frequency range applications Motorola
98 2N652 PNP Germanium transistor in the audio-frequency range applications Motorola
99 2N652A PNP Germanium transistor in the audio-frequency range applications Motorola
100 2N653 PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range Motorola
101 2N654 PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range Motorola
102 2N655 PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range Motorola
103 2N6551 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
104 2N6552 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
105 2N6553 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
106 2N6554 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
107 2N6555 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
108 2N6556 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
109 2N697 NPN Silicon Transistor for high level audio applications Newmarket Transistors NKT
110 2N731 NPN silicon transistor medium power, audio-frequency applications in industrial service Motorola
111 2N929 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
112 2N930 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
113 2SA1007 Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
114 2SA1007A Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
115 2SA1015 Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications TOSHIBA
116 2SA1015(L) Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications TOSHIBA
117 2SA1015L TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) TOSHIBA
118 2SA1048 Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications TOSHIBA
119 2SA1048(L) Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications TOSHIBA
120 2SA1048(L) Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications TOSHIBA


Datasheets found :: 11483
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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