| No. |
Part Name |
Description |
Manufacturer |
| 3091 |
2N2907ARHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
| 3092 |
2N2907ARHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
| 3093 |
2N2907ARUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
| 3094 |
2N2907ARUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
| 3095 |
2N2907AUB1 |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
| 3096 |
2N2907AUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
| 3097 |
2N2907AUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
| 3098 |
2N3019 |
80V, 1A NPN Small Signal Transistor |
ON Semiconductor |
| 3099 |
2N3055 |
NPN power transistor, 100V, 15A |
SemeLAB |
| 3100 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 3101 |
2N3056 |
NPN power transistor, 100V, 15A |
SemeLAB |
| 3102 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 3103 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 3104 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 3105 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 3106 |
2N3390 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 3107 |
2N3391 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 3108 |
2N3391A |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 3109 |
2N3392 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 3110 |
2N3393 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 3111 |
2N3394 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 3112 |
2N3414 |
Silicon transistor. 25V, 500mA. |
General Electric Solid State |
| 3113 |
2N3415 |
Silicon transistor. 25V, 500mA. |
General Electric Solid State |
| 3114 |
2N3416 |
Silicon transistor. 50V, 500mA. |
General Electric Solid State |
| 3115 |
2N3417 |
Silicon transistor. 50V, 500mA. |
General Electric Solid State |
| 3116 |
2N3441 |
Medium power silicon N-P-N transistor. 160V, 25W. |
General Electric Solid State |
| 3117 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
| 3118 |
2N3700HR |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 3119 |
2N3700HRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 3120 |
2N3700HRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
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