No. |
Part Name |
Description |
Manufacturer |
3121 |
2N3700RHRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
3122 |
2N3700RHRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
3123 |
2N3700RUBG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
3124 |
2N3700RUBT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
3125 |
2N3700UB1 |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
3126 |
2N3700UBG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
3127 |
2N3700UBT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
3128 |
2N3713 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
3129 |
2N3714 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
3130 |
2N3715 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
3131 |
2N3716 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
3132 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
3133 |
2N3772 |
100 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
3134 |
2N3773 |
High voltage, high power transistor. 160V, 150W. |
General Electric Solid State |
3135 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
3136 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
3137 |
2N3791 |
-60 V, -10 A, 150 W, PNP silicon power transistor |
Texas Instruments |
3138 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
3139 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
3140 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
3141 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
3142 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
3143 |
2N3904 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
3144 |
2N3904 |
60 V, NPN small signal transistor |
TRANSYS Electronics Limited |
3145 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
3146 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
3147 |
2N3906 |
40 V, PNP small signal transistor |
TRANSYS Electronics Limited |
3148 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
3149 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
3150 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
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