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Datasheets for 16 X

Datasheets found :: 145
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No. Part Name Description Manufacturer
31 AD8114AST Low Cost 225 MHz 16 X 16 Crosspoint Switches Analog Devices
32 AD8115 Low Cost 225 MHz 16 x 16 Crosspoint Switch, G=+2 Analog Devices
33 AD8115-EB Low Cost 225 MHz 16 X 16 Crosspoint Switches Analog Devices
34 AD8115-EVAL Low Cost 225 MHz 16 x 16 Crosspoint Switch, G=+2 Analog Devices
35 AD8115AST Low Cost 225 MHz 16 X 16 Crosspoint Switches Analog Devices
36 AD8116-EB 200 MHz, 16 x 16 Buffered Video Crosspoint Switch Analog Devices
37 AD8116JST 200 MHz, 16 x 16 Buffered Video Crosspoint Switch Analog Devices
38 CD22M3494 Switch, Crosspoint, 16 X 8 X 1, BiMOS-E Intersil
39 D52W20 52 Inch 16 x 9 HDTV Monitor SGS Thomson Microelectronics
40 IM29C510 CMOS 16 x 16 Bit, 65ns (Commercial) 75ns (Military) Multiplier/Accumulator Intersil
41 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
42 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
43 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
44 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
45 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
46 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
47 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
48 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
49 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
50 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
51 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
52 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
53 KM416RD8AC-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
54 KM416RD8AC-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
55 KM416RD8AC-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
56 KM416RD8AD-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
57 KM416RD8AD-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
58 KM416RD8AD-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
59 KM416RD8AS-RM80 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
60 KM416RD8AS-SM80 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). Samsung Electronic


Datasheets found :: 145
Page: | 1 | 2 | 3 | 4 | 5 |



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