| No. |
Part Name |
Description |
Manufacturer |
| 31 |
10DF6 |
600V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 32 |
10DF6 |
Diode Switching 600V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 33 |
10DF6TR |
600V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 34 |
10DF8 |
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 35 |
10DF8 |
Diode Switching 800V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 36 |
10DF8TR |
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 37 |
1BQ20 |
20V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
| 38 |
1BQ40 |
40V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
| 39 |
1BZ61 |
Silicon diffused junction rectifier 1A 100V |
TOSHIBA |
| 40 |
1DZ61 |
Silicon diffused junction rectifier 1A 200V |
TOSHIBA |
| 41 |
1GZ61 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
| 42 |
1JZ61 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 43 |
1LE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 800V |
TOSHIBA |
| 44 |
1LZ61 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 45 |
1N3246 |
Rectifier Diode 1A |
Motorola |
| 46 |
1N3247 |
Rectifier Diode 1A |
Motorola |
| 47 |
1N3248 |
Rectifier Diode 1A |
Motorola |
| 48 |
1N3249 |
Rectifier Diode 1A |
Motorola |
| 49 |
1N3250 |
Rectifier Diode 1A |
Motorola |
| 50 |
1N3251 |
Rectifier Diode 1A |
Motorola |
| 51 |
1N3252 |
Rectifier Diode 1A |
Motorola |
| 52 |
1N3611 |
Diode Switching 200V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 53 |
1N3611GP |
Diode Switching 200V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 54 |
1N3612 |
Diode Switching 400V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 55 |
1N3613 |
Diode Switching 600V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 56 |
1N3614 |
Diode Switching 800V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 57 |
1N361A |
Diode 800V 1A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 58 |
1N4001 |
V(rrm): 50V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 59 |
1N4001 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 50V |
IPRS Baneasa |
| 60 |
1N4001 |
Rectifier Diode 50V 1A |
Motorola |
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